Discussion and Improvement on the Calculation of the Relationship between the Base Emitter of the Bipolar Junction Transistor and the Temperature by Using MATLAB Software
Ming-Jong Lin *
Southern Taiwan University of Science and Technology, No. 13, Ln. 388, Sec. 1, Anzhong Rd., Annan Dist., Tainan City 709, Taiwan (R.O.C.).
*Author to whom correspondence should be addressed.
Abstract
The purpose of this article is to explore and improve the effect of Bipolar Junction Transistor amplifier base-emitter on temperature changes. The prelude starts with Shockley's theory and its formula calculation. Research motivation, literature data and book principles cooperate with MATLAB application software skills to develop programs; it is used to calculate the relationship between various component parameters and temperature changes. The artificial calculation steps are too cumbersome and prone to clerical errors. Therefore, the program approach has been developed with report-style calculation results with both text and pictures. The feature of computer program calculation is the ability to compare and analyze the results produced at different temperatures, rapidly and repeatedly. The lack of known Bipolar Junction Transistors is replaced by Field Effect Transistors that are not affected by temperature. If the Bipolar Junction Transistor is used as the basis for the design, temperature changes must be considered to ensure the design quality. The purpose of this article is to introduce that the process of calculation has made the shift from an artificial-based way to a computer-based one.
Keywords: AC emitter resistance, bipolar junction transistor, field effect transistor, low and high-frequency response, Shockley theory